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Technical parameters

Power
Current - Collector (Ic) (Max)700mA
Power - Max11W
Voltage - Collector Emitter Breakdown (Max)30V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 100A, 5V
Frequency - Transition225MHz ~ 400MHz
Gain11.8db ~ 13dB
Noise Figure (dB Typ @ f)-
Environment and package
Mounting TypeChassis, Stud Mount
Operating Temperature150°C(TJ)
PackageBulk
Package / Case55FT
Supplier Device Package55FT
Other
MfrMicrosemi Corporation
Product StatusObsolete
Series-
Transistor TypeNPN

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