JSMSEMI(杰盛微)China

ULN2803AN-JSM

Bipolar Transistor Arrays, Pre-Biased

高电压、大电流达林顿晶体管阵列

See alternativesAsk AI FAEDatasheet PDF

All alternatives

View full report

Technical parameters

最大输入电压(VI)30V
通道数八路
集射击穿电压(Vceo)50V
集电极电流(Ic)500mA

Documents

DatasheetDatasheet · 2.5 MB · 2026-09-21DatasheetDatasheet · 2.0 MB · 2026-09-21DatasheetDatasheet · 1.6 MB · 2026-09-21DatasheetDatasheet · 371.1 KB · 2026-09-21DatasheetDatasheet · 225.2 KB · 2026-09-21
Open document center