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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C220mA (Ta)
Drain to Source Voltage (Vdss)60V
Power - Max240mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSOT-363
Other
Base Product NumberTSM2N7002
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.91nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds30pF @ 30V
MfrTaiwan Semiconductor Corporation
Product StatusActive
Rds On (Max) @ Id, Vgs2.5Ohm @ 220mA, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

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