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Technical parameters

Key specs

TypePNP
Collector-emitter voltage500 V
Collector current150 mAMax
DC current gain1501mA
Power1 WMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)150 mA
Power - Max1 W
Voltage - Collector Emitter Breakdown (Max)500 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 1mA, 10V
Frequency - Transition50MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C~150°C(TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92
Other
MfrTaiwan Semiconductor Corporation
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 50mA

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