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Technical parameters

Key specs

Input voltage4.5 ~ 28 V
Output current3 AMax
Switching frequency290 ~ 510 kHz

Datasheet-verified parameters

25 items
ParameterValue and test conditionsSource
Input voltage range4.5 V to 28 V
Output current3 A continuous
Switching frequency400 kHz (Typ), 290 kHz (Min), 510 kHz (Max)
PackageSOT-23-THIN (DDC), 6-Pin
Operating junction temperature-40 °C to 125 °C
RoHSYes
Quiescent current45 μA (Typ), EN = 5V, VFB = 1V
Shutdown current2 μA (Typ), EN = GND
High-side FET on resistance85 mΩ (Typ), TA = 25°C, VBST-SW = 5V
Low-side FET on resistance40 mΩ (Typ), TA = 25°C, VIN = 12V
Feedback Voltage0.596 V (Typ), 0.581 V (Min), 0.611 V (Max), VIN = 12V
VIN under voltage lockout4.1 V (Typ, Rising), 3.6 V (Typ, Falling)
Enable threshold1.23 V (Typ, Rising), 1.16 V (Typ, Falling)
High-side current limit5 A (Typ), 4 A (Min), 6 A (Max)
Low-side source current limit4 A (Typ), 3.1 A (Min), 5.5 A (Max)
Thermal Shutdown160 °C (Max, Rising)
Absolute Maximum Ratings - Input voltage-0.3 V to 30 V (VIN)
Absolute Maximum Ratings - Operating junction temperature-40 °C to 150 °C
Recommended Operating Conditions - Input voltage4.5 V to 28 V (VIN)
Recommended Operating Conditions - Operating junction temperature-40 °C to 125 °C
ESD Human-body model±2500 V
ESD Charged-device model±1500 V
Soft start time5 ms
Control modePeak current mode control
Light load modeAdvanced Eco-mode pulse skip
All parameters (9)ExpandCollapse
Power
Input voltage range4.5 V to 28 V
Non switching quiescent current45 μA (Typ)
Output Current3A
Shut down current2 μA (Typ)
AC and DC characteristics
Centre switching frequency400 kHz (Typ)
Environment and package
Operating junction temperature-40 °C to 125 °C
PackageSOT-23-THIN, 6
Other
High-side FET on resistance85 mΩ (Typ)
Low-side FET on resistance40 mΩ (Typ)

Pinout and package

Figure 4-1. DDC Package 6-Pin …
Figure 4-1. DDC Package 6-Pin …
Package: SOT-23-THIN (DDC), 6-Pin
PinNameFunctionSource
1GND, Ground pin, Source terminal of low-side power NFET as well as the ground terminal for controller circuit
2SW, Switch node connection between high-side NFET and low-side NFET
3VIN, Input voltage supply pin, The drain terminal of high-side power NFET
4FB, Converter feedback input, Connect to output voltage with feedback resistor divider
5EN, Enable pin, Float the EN pin to enable
6BOOT, Supply input for the high-side NFET gate drive circuit, Connect a 0.1μF capacitor between BOOT and SW pins

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