TransphormUnited States
GANFET N-CH 650V 50A TO247-3
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage650 V
Continuous drain current50 A
On-resistance41 mΩMax · 32A
Gate threshold voltage2.65 VMax · 700μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 178W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2197 pF @ 400 V |
| Mfr | Transphorm |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 32A, 8V |
| Series | - |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | ±18V |
| Vgs(th) (Max) @ Id | 2.65V @ 700µA |