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Technical parameters

Key specs

Channels1
Isolation voltage5 kV
Output typeTransistor
Current transfer ratio50 ~ 600 %Max 600% (IF = 5mA,VCE = 5V)

Datasheet-verified parameters

20 items
ParameterValue and test conditionsSource
Channels1
AC Isolation Voltage5000V RMS
Output TypeNPN silicon photo transistor
Current Transfer RatioMin 50%, Max 600% (IF = 5mA, VCE = 5V)
PackageDIP4
Operating Temperature-40°C to +105°C
GradeUL and VDE approvals
RoHSCompliant
Forward VoltageTyp 1.2V, Max 1.4V (IF = 20mA)
Reverse LeakageMax 10μA (VR = 4V)
Collector-Emitter Saturation VoltageTyp 0.1V, Max 0.2V (IF = 20mA, IC = 1mA)
Cut-Off FrequencyTyp 80kHz (VCE = 5V, IC = 2mA, RL = 100Ω)
Output Rise TimeTyp 4μs, Max 18μs (VCC = 5V, IC = 2mA, RL = 100Ω)
Output Fall TimeTyp 3μs, Max 18μs (VCC = 5V, IC = 2mA, RL = 100Ω)
Input Forward CurrentMax 50mA
Peak Forward CurrentMax 1A (100μs, 100Hz)
Reverse VoltageMax 6V
Power dissipationMax 70mW
Junction TemperatureMax 125°C
CertificationUL File E91231, VDE Approval Certificate No. 40028086
All parameters (7)ExpandCollapse
Power
AC Isolation Voltage5000V RMS
Collector Current50mA
Collector to Emitter Voltage VCEO55V
Current Transfer Ratio50 % (Min)
Input Forward Current50mA
Environment and package
Operating Temperature-55 to 110 °C
PackageDual In Line Plastic Package

Pinout and package

TLP521
TLP521
Package: DIP4
PinNameFunctionSource
1Anode
2Cathode
3Emitter
4Collector

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