PIN CONFIGURATIONS (TOP VIEW)

TLP521-1

4-pin DIP

Toshiba TLP521-1 is a GaAs infrared emitting diode and photo-transistor optocoupler with 2500Vrms isolation voltage, 55V collector-emitter voltage, in a 4-pin DIP package, suitable for general commercial applications.Checked against the datasheet

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Technical parameters

Datasheet-verified parameters

15 items

Parameter	Value and test conditions	Source
Package	4-pin DIP (JEDEC 11-5B2)
Operating Temperature	-25°C to 85°C
Isolation Voltage	2500Vrms (Min.)
Collector-Emitter Breakdown Voltage	55V (Min.) at $I_C=0.5mA$
Emitter-Collector Breakdown Voltage	7V (Min.) at $I_E=0.1mA$
Forward Voltage	1.0V (Min.) / 1.15V (Typ.) / 1.3V (Max.) at $I_F=10mA$
Reverse Current	10μA (Max.) at $V_R=5V$
Collector Dark Current	10nA (Typ.) / 100nA (Max.) at $V_{CE}=24V, Ta=25°C$; 2μA (Typ.) / 50μA (Max.) at $V_{CE}=24V, Ta=85°C$
Current Transfer Ratio	50% (Min.) / 600% (Max.) at $I_F=5mA, V_{CE}=5V$ Rank GB
Saturated CTR	60% (Typ.) at $I_F=1mA, V_{CE}=0.4V$ Rank GB
Collector-Emitter Saturation Voltage	0.4V (Max.) at $I_C=2.4mA, I_F=8mA$
Recommended Supply Voltage	5V (Typ.) / 24V (Max.)
Recommended Forward Current	16mA (Typ.) / 20mA (Max.)
Recommended Collector Current	1mA (Typ.) / 10mA (Max.)
UL Recognition	UL1577, File No. E67349

All parameters (4)ExpandCollapse

AC and DC characteristics
共模抑制比	NKV/us
Environment and package
封装类型1	DIP
Other
引脚数量1	4
最大数据速率	NMbps

Pinout and package

Pin	Name	Function	Source
1		ANODE
2		CATHODE
3		EMITTER
4		COLLECTOR

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