MOSFET N-CH
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage600 V
Continuous drain current13 A
On-resistance430 mΩMax · 6.5A
Gate threshold voltage4 VMax · 1.75mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 45W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Package | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220SIS |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1940 pF @ 300 V |
| Mfr | Toshiba Semiconductor and Storage |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 6.5A, 10V |
| Series | U-MOSIX |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 1.75mA |