X35 PB-F POWER MOSFET TRANSISTOR
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage100 V
Continuous drain current42 A
On-resistance10.7 mΩMax · 21A
Gate threshold voltage2.5 VMax · 300μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 87W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C |
| Package | Tube |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 |
| Other | |
| Base Product Number | TK110E10 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2040 pF @ 50 V |
| Mfr | Toshiba Semiconductor and Storage |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 10.7mOhm @ 21A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 300µA |