Toshiba Semiconductor and StorageJapan

TK110E10PL,S1X(S

Transistors - FETs, MOSFETs - Single
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Technical parameters

Key specs

Drain-source voltage100 V
Continuous drain current42 A
Power
漏源电压(Vdss)100V
连续漏极电流(Id)42A
Other
耗散功率(Pd)87W

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