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Technical parameters

Power
Ic(100℃)-集电极直流电流40A
Ic(25℃)-集电极直流电流80A
Vce(sat)-集射极导通饱和电压2V
Vces-集射极阻断电压1200V
Environment and package
封装类型1TO3P
Other
Eoff-关断损耗能量1.1mJ
Eon-开通损耗能量NmJ
Qg-栅极充电电荷NnC
引脚数量13
软开关0
集成ESD二极管0
集成串联二极管0

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