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View full reportTechnical parameters
| Power | |
|---|---|
| N管-ID最大漏极电流 | 2A |
| N管-Id额定电流 | 2A |
| N管-Vdss漏源电压 | 200V |
| N管-Vgsth门槛电压 | 2V |
| P管-ID最大漏极电流 | 2A |
| P管-Id额定电流 | 2A |
| P管-Vdss漏源电压 | 200V |
| AC and DC characteristics | |
| N管-Rds最大导通阻抗 | 7mΩ |
| P管-Rds最大导通阻抗 | 8mΩ |
| Environment and package | |
| 封装类型1 | SOIC |
| Other | |
| N管-Qg栅极电荷 | NnC |
| N管-Qg栅极电荷typ | NnC |
| P管-Qg栅极电荷 | NnC |
| P管-Qg栅极电荷typ | NnC |
| 引脚数量1 | 8 |