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Technical parameters

Power
IC-最大集电极电流0.1A
VCEO-CE结击穿电压45V
VCEO-集射级击穿电压45V
AC and DC characteristics
fT-变换频率NMHZ
hFE-最小直流增益200
Hfe-最小直流增益200
Environment and package
封装类型1SOT363
最大工作温度150℃
Other
Pd-功率耗散0.2W
Pd-最大功率耗散0.2W
VCE(sat)-CE结饱和压降0.6V
VCE(sat)-集射级饱和压降0.6V
引脚数量16

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