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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage50 V
Collector current150 mAMax
DC current gain2002mA
Power320 mWMax
Power
Current - Collector Cutoff (Max)30nA (ICBO)
Current - Collector (Ic) (Max)150 mA
Power - Max320 mW
Voltage - Collector Emitter Breakdown (Max)50 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Frequency - Transition100MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3
Other
Base Product NumberTBC847
MfrToshiba Semiconductor and Storage
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic400mV @ 100mA, 5mA

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