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View full reportTechnical parameters
| Power | |
|---|---|
| IC(100℃)-最大集电极电流 | 20A |
| Ic(100℃)-集电极直流电流 | 20A |
| IC(25℃)-最大集电极电流 | 40A |
| Ic(25℃)-集电极直流电流 | 40A |
| Vce(sat)-集射极导通饱和电压 | 2.2V |
| Vces-集射极阻断电压 | 1200V |
| VCES-集射极阻断电压 | 1200V |
| Environment and package | |
| 封装类型1 | TO3P |
| Other | |
| Eoff-关断损耗能量 | 3mJ |
| Eon-开通损耗能量 | 1.4mJ |
| Qg-栅极充电电荷 | NnC |
| Qg-栅极电荷 | NnC |
| VCE(sat)-集射级饱和压降 | 2.2V |
| 内置ESD保护二极管 | 0 |
| 内置串联二极管 | 0 |
| 引脚数量1 | 3 |
| 软开关 | 0 |
| 集成ESD二极管 | 0 |
| 集成串联二极管 | 0 |
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