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View full reportTechnical parameters
| Power | |
|---|---|
| IC(25℃)-最大集电极电流 | 1500A |
| ICM-集电极峰值电流 | 3000A |
| IC-集电极直流电流(25℃) | 1500A |
| VCE(sat)-集射极导通饱和电压 | 3.4V |
| VCES-集射极阻断电压 | 3300V |
| 最大允许功耗 | 9600W |
| Other | |
| Eoff-关断损耗能量 | 4100mJ |
| Eon-开通损耗能量 | 3900mJ |
| IGBT集成二极管 | 0 |
| Pd-功率耗散 | 9600W |
| Qg-栅极电荷 | 25000nC |
| VCE(sat)-集射级饱和压降 | 3.4V |
| VGES(th)-门极发射极阈值 | 5.3V |
| Vge(th)-门极发射极阈值 | 5.3V |
| 关断损耗能量 | 4100mJ |
| 内置整流二极管 | 0 |
| 内置整流桥堆 | 0 |
| 单位温升 | N℃/W |
| 开通损耗能量 | 3900mJ |
| 栅极充电电荷 | 25000nC |
| 隔离型IGBT | 0 |
| 集成整流桥堆 | 0 |
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