VBsemi(微碧半导体)China
STY60NM60-VB
Transistors - FETs, MOSFETs - Single台积电流片，长电科技封装；TO247；N—Channel沟道；650V；47A；RDS(ON)=50(mΩ)；VGS=±30V；Vth=3.5V；采用SJ_Multi-EPI技术；
All alternatives
View full reportTechnical parameters
Key specs
Drain-source voltage650 V
Continuous drain current47 A
On-resistance60 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 650V |
| 连续漏极电流(Id) | 47A |
| Other | |
| 导通电阻(RDS(on)) | 60mΩ@10V |
| 耗散功率(Pd) | 415W |