STMicroelectronicsSwitzerland

STY112N65M5

ActiveTransistors - FETs, MOSFETs - SingleTO-247-3

MOSFET N-CH 650V 96A MAX247

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage650 V
Continuous drain current96 A
On-resistance22 mΩMax · 47A
Gate threshold voltage5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C96A (Tc)
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)625W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C(TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageMAX247™
Other
Base Product NumberSTY112
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds16870 pF @ 100 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs22mOhm @ 47A, 10V
SeriesMDmesh™ V
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id5V @ 250µA

Documents

DatasheetDatasheet · 296.5 KB · 2026-09-21DatasheetDatasheet · 296.5 KB · 2026-09-21Application NoteApplication Note · 2.7 MB · 2026-09-22Application NoteApplication Note · 2.2 MB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.4 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22MarketingMarketing · 980.7 KB · 2026-09-22Application NoteApplication Note · 896.9 KB · 2026-09-22Application NoteApplication Note · 880.0 KB · 2026-09-22MarketingMarketing · 791.7 KB · 2026-09-22MarketingMarketing · 787.0 KB · 2026-09-22Application NoteApplication Note · 772.3 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22Application NoteApplication Note · 657.7 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22MarketingMarketing · 203.5 KB · 2026-09-22MarketingMarketing · 109.3 KB · 2026-09-22
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