STW9N150
STMicroelectronicsSwitzerland

STW9N150

ActiveTransistors - FETs, MOSFETs - SingleTO-247-3

MOSFET N-CH 1500V 8A TO247-3

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage1.5 kV
Continuous drain current8 A
On-resistance2.5 ΩMax · 4A
Gate threshold voltage5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drain to Source Voltage (Vdss)1500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)320W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C~150°C(TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247-3
Other
Base Product NumberSTW9
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs89.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3255 pF @ 25 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs2.5Ohm @ 4A, 10V
SeriesPowerMESH™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Documents

DatasheetDatasheet · 254.3 KB · 2026-09-21DatasheetDatasheet · 254.3 KB · 2026-09-21Application NoteApplication Note · 2.7 MB · 2026-09-22MarketingMarketing · 1.9 MB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22MarketingMarketing · 980.7 KB · 2026-09-22Application NoteApplication Note · 896.9 KB · 2026-09-22Application NoteApplication Note · 880.0 KB · 2026-09-22Application NoteApplication Note · 772.3 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22Application NoteApplication Note · 657.7 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22
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