STMicroelectronicsSwitzerland
MOSFET N-CH 600V 300MA 8SO
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage600 V
Continuous drain current300 mA
On-resistance8.5 ΩMax · 500mA
Gate threshold voltage3.7 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 300mA (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 2W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Other | |
| Base Product Number | STS1 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 156 pF @ 25 V |
| Mfr | STMicroelectronics |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 8.5Ohm @ 500mA, 10V |
| Series | SuperMESH™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |