STD30NF06LT4

ActiveTransistors - FETs, MOSFETs - SingleDPAK

MOSFET N-CH 60V 35A DPAK

N-channel 60V 35A STripFET II Power MOSFET in DPAK package, low threshold drive, minimized gate charge, suitable for switching applications.Checked against the datasheet

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Technical parameters

Key specs

ChannelN-channel

Drain-source voltage60 VMin 60 V (VGS = 0，ID = 250 μA)

Continuous drain current35 A

On-resistance28 mΩMax · Max 0.028 Ω (VGS = 10 V，ID = 18 A)，Max 0.03 Ω (VGS = 5 V，ID = 18 A)

Gate threshold voltage2.5 VMax · Max 2.5 V (VDS = VGS，ID = 250 μA)

Datasheet-verified parameters

21 items

Parameter	Value and test conditions	Source
Channel	N-channel
Drain-source breakdown voltage	Min 60 V (VGS = 0, ID = 250 μA)
Drain current (continuous)	35 A at TC = 25 °C; 25 A at TC = 100 °C
Static drain-source on-resistance	Typ 0.022 Ω, Max 0.028 Ω (VGS = 10 V, ID = 18 A); Typ 0.025 Ω, Max 0.03 Ω (VGS = 5 V, ID = 18 A)
Gate threshold voltage	Min 1 V, Typ 1.7 V, Max 2.5 V (VDS = VGS, ID = 250 μA)
Package	DPAK
Max. operating junction temperature	-55 to 175 °C
Storage temperature	-55 to 175 °C
Total dissipation	70 W at TC = 25 °C
Derating factor	0.47 W/°C
Drain current (pulsed)	140 A
Gate-source voltage	±20 V
Zero gate voltage drain current	Max 1 μA (VDS = 60 V); Max 10 μA (VDS = 60 V, TC = 125 °C)
Gate-body leakage current	Max ±100 nA (VDS = 0, VGS = ±20 V)
Forward on voltage	Max 1.5 V (ISD = 35 A, VGS = 0)
Reverse recovery time	Typ 70 ns (ISD = 35 A, di/dt = 100 A/μs, VDD = 15 V, TJ = 150 °C)
Reverse recovery charge	Typ 140 nC (ISD = 35 A, di/dt = 100 A/μs, VDD = 15 V, TJ = 150 °C)
Turn-on delay time	Typ 30 ns (VDD=30 V, ID=18 A, RG=4.7 Ω, VGS=4.5 V)
Rise time	Typ 105 ns (VDD=30 V, ID=18 A, RG=4.7 Ω, VGS=4.5 V)
Turn-off-delay time	Typ 65 ns (VDD=30 V, ID=18 A, RG=4.7 Ω, VGS=4.5 V)
Fall time	Typ 25 ns (VDD=30 V, ID=18 A, RG=4.7 Ω, VGS=4.5 V)

All parameters (21)ExpandCollapse

Power
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Power Dissipation (Max)	70W (Tc)
Environment and package
Mounting Type	Surface Mount
Operating Temperature	-55°C~175°C(TJ)
Package	Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	DPAK
Other
Base Product Number	STD30
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	1600 pF @ 25 V
Mfr	STMicroelectronics
Product Status	Active
Rds On (Max) @ Id, Vgs	28mOhm @ 18A, 10V
Series	STripFET™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

Pinout and package

Figure 1. Internal schematic d… — Package: **DPAK**

Pin	Name	Function	Source
1		Gate
2		Drain / TAB
3		Source

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