STMicroelectronicsSwitzerland
MOSFET N-CH 30V 27A DPAK
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current27 A
On-resistance19 mΩMax · 13.5A
Gate threshold voltage1 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 30W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~175°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
| Other | |
| Base Product Number | STD27N |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 475 pF @ 25 V |
| Mfr | STMicroelectronics |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 13.5A, 10V |
| Series | STripFET™ V |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±22V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |