onsemiUnited States
DIODE ARR SCHOT 30V 1A 4ECSP1608
All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 1A |
| Current - Reverse Leakage @ Vr | 360 µA @ 15 V |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 450 mV @ 1 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 125°C |
| Package | Bulk |
| Package / Case | 4-UFDFN |
| Supplier Device Package | 4-ECSP1608 |
| Other | |
| Base Product Number | SS1003 |
| Diode Configuration | 2 Independent |
| Mfr | onsemi |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 10 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
Documents
No documents are linked to this part yet.