Taiwan Semiconductor CorporationTaiwan, China
DIODE SCHOTTKY 90V 1A TS-1
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Technical parameters
Key specs
Reverse voltage90 V
Average rectified current1 A
Forward voltage800 mVMax · 1 A
TypeSchottkyFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 100 µA @ 90 V |
| Voltage - DC Reverse (Vr) (Max) | 90 V |
| Voltage - Forward (Vf) (Max) @ If | 800 mV @ 1 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -55°C~150°C |
| Package | Tape & Reel (TR) |
| Package / Case | T-18, Axial |
| Supplier Device Package | TS-1 |
| Other | |
| Capacitance @ Vr, F | 28pF @ 4V, 1MHz |
| Diode Type | Schottky |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
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