Taiwan Semiconductor CorporationTaiwan, China
DIODE SCHOTTKY 50V 1A TS-1
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Technical parameters
Key specs
Reverse voltage50 V
Average rectified current1 A
Forward voltage700 mVMax · 1 A
TypeSchottkyFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 500 µA @ 50 V |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 700 mV @ 1 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -55°C~150°C |
| Package | Tape & Box (TB) |
| Package / Case | T-18, Axial |
| Supplier Device Package | TS-1 |
| Other | |
| Base Product Number | SRT15 |
| Capacitance @ Vr, F | - |
| Diode Type | Schottky |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Series | Automotive, AEC-Q101 |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
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