SPS02N60C3BKMA1

LOW POWER_LEGACY

All alternatives

ChannelN-channel

Drain-source voltage600 V

Continuous drain current1.8 A

On-resistance3 ΩMax · 1.1A

Gate threshold voltage3.9 VMax · 80μA

Power
Current - Continuous Drain (Id) @ 25°C	1.8A (Tc)
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	25W (Tc)
Environment and package
Mounting Type	Through Hole
Operating Temperature	-55°C~150°C(TJ)
Package	Tube
Package / Case	TO-251-3 Stub Leads, IPak
Supplier Device Package	PG-TO251-3-11
Other
Base Product Number	SPS02N
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 25 V
Mfr	Infineon Technologies
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	3Ohm @ 1.1A, 10V
Series	CoolMOS™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.9V @ 80µA