Infineon TechnologiesGermany
0.8A, 600V, N-CHANNEL MOSFET, T
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage600 V
Continuous drain current800 mA
On-resistance6 ΩMax · 500mA
Gate threshold voltage3.9 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 800mA (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 11W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Supplier Device Package | PG-TO251-3-11 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 500mA, 10V |
| Series | CoolMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
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