Zhengxin(正芯)China
采用GPP工艺芯片，具有低漏电、高对档率等优势 ，有较好的高温特性及稳定性。
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View full reportTechnical parameters
Key specs
Reverse standoff voltage160 V
Clamping voltage259 VMax
Peak pulse power200 W
| Power | |
|---|---|
| 反向截止电压(Vrwm) | 160V |
| 峰值脉冲电流(Ipp) | 770mA |
| 钳位电压 | 259V |
| Other | |
| 峰值脉冲功率(Ppp) | 200W |
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