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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C4A
Drain to Source Voltage (Vdss)60V
Power - Max4W
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C(TJ)
PackageTube
Package / Case12-SIP
Supplier Device Package12-SIP
Other
FET FeatureStandard
FET Type3 N and 3 P-Channel (3-Phase Bridge)
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds150pF @ 10V
MfrSanken
Product StatusActive
Rds On (Max) @ Id, Vgs550mOhm @ 2A, 4V
Series-
Vgs(th) (Max) @ Id2V @ 250µA

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