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Technical parameters

Power
ID-最大漏极电流120A
VDSS-最大漏源电压100V
Vgs(th)-门槛电压3V
AC and DC characteristics
RDS(on)-漏源导通阻抗3.7mΩ
Environment and package
封装类型1TO263
Other
Ciss-输入等效电容6920pF
Qg-栅极电荷117nC
Vgs-栅源耐压20V
内置ESD保护二极管0
内置整流二极管0
引脚数量13

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