Rohm SemiconductorJapan
750V, 26M, 3-PIN THD, TRENCH-STR
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage750 V
Continuous drain current56 A
On-resistance34 mΩMax · 29A
Gate threshold voltage4.8 VMax · 15.4mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Drain to Source Voltage (Vdss) | 750 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Power Dissipation (Max) | 176W |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247N |
| Other | |
| Base Product Number | SCT4026 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2320 pF @ 500 V |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 29A, 18V |
| Series | - |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +21V, -4V |
| Vgs(th) (Max) @ Id | 4.8V @ 15.4mA |
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