Rohm SemiconductorJapan
DIODE SIL CARB 1.2KV 10A TO220AC
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Technical parameters
Key specs
Reverse voltage1.2 kV
Average rectified current10 A
Forward voltage1.6 VMax · 10 A
TypeSchottky
| Power | |
|---|---|
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 10 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175°C(Max) |
| Package | Tube |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220AC |
| Other | |
| Base Product Number | SCS210 |
| Capacitance @ Vr, F | 550pF @ 1V, 1MHz |
| Diode Type | Silicon Carbide Schottky |
| Mfr | Rohm Semiconductor |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 0 ns |
| Series | Automotive, AEC-Q101 |
| Speed | No Recovery Time > 500mA (Io) |
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