Rohm SemiconductorJapan
DIODE SIL CARB 1.2KV 10A TO220AC
All alternatives
View full report1 alternatives on file. Sign in to view them.
Technical parameters
Key specs
Reverse voltage1.2 kV
Average rectified current10 A
Forward voltage1.6 VMax · 10 A
TypeSchottky
| Power | |
|---|---|
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 10 A |
| Environment and package | |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175°C (Max) |
| Package / Case | TO-220-2 |
| Qualification | AEC-Q101 |
| Supplier Device Package | TO-220AC |
| Other | |
| Base Product Number | SCS210 |
| Capacitance @ Vr, F | 550pF @ 1V, 1MHz |
| Mfr | Rohm Semiconductor |
| Packaging | Tube |
| Part Status | Obsolete |
| Reverse Recovery Time (trr) | 0 ns |
| Series | - |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |