Taiwan Semiconductor CorporationTaiwan, China
DIODE GP 200V 1.2A SOD123HE
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View full reportTechnical parameters
Key specs
Reverse voltage200 V
Average rectified current1.2 A
Forward voltage1.3 VMax · 1.2 A
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1.2A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 1.2 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C~175°C |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | SOD-123H |
| Supplier Device Package | SOD-123HE |
| Other | |
| Capacitance @ Vr, F | - |
| Diode Type | Standard |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Series | Automotive, AEC-Q101 |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
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