Rohm SemiconductorJapan
MOSFET N-CH 30V 4.5A TSMT6
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current4.5 A
On-resistance38 mΩMax · 4.5A
Gate threshold voltage2.5 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Power Dissipation (Max) | 600mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | TSMT6 (SC-95) |
| Other | |
| Base Product Number | RSQ045 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 10 V |
| Mfr | Rohm Semiconductor |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 4.5A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |