Rohm SemiconductorJapan
MOSFET P-CH 30V 1A TUMT3
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Technical parameters
Key specs
ChannelP-channel
Drain-source voltage30 V
Continuous drain current1 A
On-resistance350 mΩMax · 1A
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Power Dissipation (Max) | 800mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 3-SMD, Flat Leads |
| Supplier Device Package | TUMT3 |
| Other | |
| Base Product Number | RSF010 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 10 V |
| Mfr | Rohm Semiconductor |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 1A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | - |