Taiwan Semiconductor CorporationTaiwan, China
DIODE GEN PURP 800MA SUB SMA
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View full reportTechnical parameters
Key specs
Average rectified current800 mA
Forward voltage1.3 VMax · 800 mA
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 800mA |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 800 mA |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C~150°C |
| Package | Tape & Reel (TR) |
| Package / Case | DO-219AB |
| Supplier Device Package | Sub SMA |
| Other | |
| Base Product Number | RS1M |
| Capacitance @ Vr, F | 10pF @ 4V, 1MHz |
| Diode Type | Standard |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Reverse Recovery Time (trr) | 500 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |