Rohm SemiconductorJapan
MOSFET P-CH 20V 6.5A TSMT6
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Technical parameters
Key specs
ChannelP-channel
Drain-source voltage20 V
Continuous drain current6.5 A
On-resistance21 mΩMax · 6.5A
Gate threshold voltage1.2 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Power Dissipation (Max) | 1.25W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | TSMT6 (SC-95) |
| Other | |
| Base Product Number | RQ6C065 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1520 pF @ 10 V |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 6.5A, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |