Rohm SemiconductorJapan
MOSFET N-CH 30V 13A HSMT8
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current13 A
On-resistance8.1 mΩMax · 13A
Gate threshold voltage2.5 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 2W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Other | |
| Base Product Number | RQ3E130 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 840 pF @ 15 V |
| Mfr | Rohm Semiconductor |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 8.1mOhm @ 13A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
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