EIC SEMICONDUCTOR INC.United States
DIODE GEN PURP 1KV 1.2A D2
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View full reportTechnical parameters
Key specs
Reverse voltage1 kV
Average rectified current1.2 A
Forward voltage920 mVMax · 1.5 A
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1.2A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 920 mV @ 1.5 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Package | Bag |
| Package / Case | D-2, Axial |
| Supplier Device Package | D2 |
| Other | |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Mfr | EIC SEMICONDUCTOR INC. |
| Product Status | Active |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
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