Rectron USATaiwan, China
MOSFET N-CHANNEL 100V 2A SOT23
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage100 V
Continuous drain current2 A
On-resistance220 mΩMax · 1A
Gate threshold voltage2.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 1.1W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 50 V |
| Mfr | Rectron USA |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 1A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Documents
No documents are linked to this part yet.