Harris CorporationUnited States
N-CHANNEL, MOSFET
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current17 A
On-resistance130 mΩMax · 17A
Gate threshold voltage2 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Power Dissipation (Max) | 60W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 30 V |
| Mfr | Harris Corporation |
| Packaging | Bulk |
| Part Status | Active |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 17A, 5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |