Harris CorporationUnited States
N-CHANNEL POWER MOSFET
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage500 V
Continuous drain current10 A
On-resistance600 mΩMax · 5A
Gate threshold voltage4 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 150W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | TO-218-3 Isolated Tab, TO-218AC |
| Supplier Device Package | TO-218 Isolated |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
| Mfr | Harris Corporation |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 5A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |