Rohm SemiconductorJapan
MOSFET N-CHANNEL 600V 24A LPTS
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage600 V
Continuous drain current24 A
On-resistance165 mΩMax · 11.3A
Gate threshold voltage5 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 245W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | LPTS |
| Other | |
| Base Product Number | R6024 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 11.3A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |