R6011ENX

MOSFET N-CH 600V 11A TO220FM

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ChannelN-channel

Drain-source voltage600 V

Continuous drain current11 A

On-resistance390 mΩMax · 3.8A

Gate threshold voltage4 VMax · 1mA

Power
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	40W (Tc)
Environment and package
Mounting Type	Through Hole
Operating Temperature	150°C(TJ)
Package	Bulk
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220FM
Other
Base Product Number	R6011
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	670 pF @ 25 V
Mfr	Rohm Semiconductor
Product Status	Active
Rds On (Max) @ Id, Vgs	390mOhm @ 3.8A, 10V
Series	-
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 1mA