QNHCHIP(乾能惠)China
QNM30ND20AJ
Transistors - FETs, MOSFETs - Single2个N沟道，共源配置；Vdss=30V，Id=22A；RDS(ON)=15.8mΩ@4.5V;10.4mΩ@10V；Vgs=±20V，VGS(th)=1.0~2.2V；Ciss=829pF，Coss=96pF，Crss=77pF；Pd=34W，Qg=20nC@10V；TJ=-55~150℃；无铅、先进沟槽工艺；应用于负载开关、PWM应用、电源管理。
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current22 A
On-resistance10.4 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 22A |
| Other | |
| 导通电阻(RDS(on)) | 10.4mΩ@10V |
| 数量 | 2个N沟道 |
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