IGBT Drive
All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| Breakdown Voltage (BV) (kV rms) | 5 |
| Environment and package | |
| Moisture Sensitivity Level (MSL) | 1 |
| Other | |
| Country of Assembly | JAPAN |
| Country of Wafer Fabrication | JAPAN |
| IFLH (Max) (mA) | 5 |
| IOL/IOH (Peak) (A) | 2 |
| Lead Compliant | Yes |
| Longevity | 2030 Dec |
| MOQ | 20 |
| Pb (Lead) Free | Yes |
| Tape & Reel | No |
| Target applications | IGBT, Power MOSFET Gate Driver, Industrial inverter, IH(Induction Heating), AC Servo, PDP, Uninterruptible Power Supply (UPS), Solar inverter |
| tPHL (Max) (μs) | 0.25 |
| tPLH (Max) (μs) | 0.25 |
| VCC-VEE (Max) (V) | 35 |