SHINDENGEN(新电元)Japan
General rectifying diode is a high-voltage P-N junction element. Our chip structure stands out for its heat and humidity resistance, using our own chemically and physically stable glass passivation. We have a wide range of lineup, for withstand voltage up to 800V and output current up to 30A.
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View full reportTechnical parameters
Key specs
Reverse voltage800 V
Average rectified current250 A
| Power | |
|---|---|
| Average forward current | 250 |
| Forward voltage | 1.33 |
| Repetitive peak reverse voltage | 800 |
| Reverse current | 30000 |
| Surge forward current | 4500 |
| Environment and package | |
| Junction temperature | -40 to 150 |
| Package (House Name) | E-73 |
| Storage temperrature | -40 to 125 |
| Other | |
| As | Not identified |
| Br | Not identified |
| Conditions | VR=VRRM, Tj=150℃ |
| Ctrl Number | PR250KN8N_Rev.01(2026.02) |
| I F (AV) | 250A |
| I FSM | 4500A |
| Ni | Not identified |
| Pb | Not identified |
| Rp | Not identified |
| Sb | Not identified |
| V RRM | 800V |