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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage45 V
Collector current500 mAMax
DC current gain30010mA
Power625 mWMax
Power
Current - Collector Cutoff (Max)50nA
Current - Collector (Ic) (Max)500 mA
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)45 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 10mA, 1V
Frequency - Transition250MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Other
Base Product NumberPN100
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic400mV @ 20mA, 200mA

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